FGH40T100SMD igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
* High Input Impedance
* Fast Switching
* These Devices are Pb−.
Features
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
* High Inpu.
Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Features
* High Cu.
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